Back to Search
Start Over
Analysis of composition and microstructures of Ge grown on porous silicon using Raman spectroscopy and transmission electron microscopy
- Source :
- Superlattices and Microstructures, Superlattices and Microstructures, Elsevier, 2017, 112, pp.493--498. 〈10.1016/j.spmi.2017.10.003〉, Superlattices and Microstructures, 2017, 112, pp.493--498. ⟨10.1016/j.spmi.2017.10.003⟩, Superlattices and Microstructures, Elsevier, 2017, 112, pp.493--498. ⟨10.1016/j.spmi.2017.10.003⟩
- Publication Year :
- 2017
- Publisher :
- HAL CCSD, 2017.
-
Abstract
- International audience; Composition and microstructure of Ge grown on porous silicon (PSi) by Molecular Beam Epitaxy (MBE) at different temperatures are examined using High Resolution Transmission Electron Microscopy (HRTEM) and Raman spectroscopy. Ge grown at 400 °C on PSi buffer produces a planar Ge film with high crystalline quality compared to Ge grown on bulk Si. This result is attributed to the compliant nature of PSi. Increasing growth temperature \textgreater600 °C, changes the PSi morphology, increase the Ge/Si intermixing in the pores during Ge growth and lead to obtain a composite SiGe/Si substrate. Ge content in the composite SiGe substrate can controlled via growth temperature. These substrates serve as low cost virtual substrate for high efficiency III–V/Si solar cells.
- Subjects :
- Materials science
Composite number
Analytical chemistry
02 engineering and technology
Substrate (electronics)
Ge growth
Porous silicon
7. Clean energy
01 natural sciences
symbols.namesake
0103 physical sciences
General Materials Science
Electrical and Electronic Engineering
[PHYS.COND]Physics [physics]/Condensed Matter [cond-mat]
High-resolution transmission electron microscopy
010302 applied physics
021001 nanoscience & nanotechnology
Condensed Matter Physics
Microstructure
Transmission electron microscopy
Raman spectroscopy
symbols
0210 nano-technology
Molecular beam epitaxy
[ PHYS.COND ] Physics [physics]/Condensed Matter [cond-mat]
Subjects
Details
- Language :
- English
- ISSN :
- 07496036 and 10963677
- Database :
- OpenAIRE
- Journal :
- Superlattices and Microstructures, Superlattices and Microstructures, Elsevier, 2017, 112, pp.493--498. 〈10.1016/j.spmi.2017.10.003〉, Superlattices and Microstructures, 2017, 112, pp.493--498. ⟨10.1016/j.spmi.2017.10.003⟩, Superlattices and Microstructures, Elsevier, 2017, 112, pp.493--498. ⟨10.1016/j.spmi.2017.10.003⟩
- Accession number :
- edsair.doi.dedup.....d84607f3590dff1f21a4f30f3082c1a5