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Optimized Silicon Photomultipliers with optical trenches
- Source :
- European Solid-State Device Research Conference (ESSDERC) 2011, pp. 183–186, 2011, info:cnr-pdr/source/autori:R. Pagano, D. Corso, S. Lombardo, S. Libertino, G. Valvo, D. Sanfilippo, A. Russo, P.G. Fallica, A. Pappalardo, P. Finocchiaro/congresso_nome:European Solid-State Device Research Conference (ESSDERC) 2011/congresso_luogo:/congresso_data:2011/anno:2011/pagina_da:183/pagina_a:186/intervallo_pagine:183–186
- Publication Year :
- 2011
- Publisher :
- Editions Frontieres, Gif-sur-Yvette, France , Stati Uniti d'America, 2011.
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Abstract
- This paper reports on the electrical characteristics of silicon photomultipliers (SiPM) with optimized optical trench technology. The SiPM arrays were characterized from single pixels up to the full 64×64 pixel device. The data clearly show a perfect scaling of the dark current with the pixel number, thus indicating an almost ideal insulation among the pixels in the whole voltage operating range.
Details
- Language :
- English
- Database :
- OpenAIRE
- Journal :
- European Solid-State Device Research Conference (ESSDERC) 2011, pp. 183–186, 2011, info:cnr-pdr/source/autori:R. Pagano, D. Corso, S. Lombardo, S. Libertino, G. Valvo, D. Sanfilippo, A. Russo, P.G. Fallica, A. Pappalardo, P. Finocchiaro/congresso_nome:European Solid-State Device Research Conference (ESSDERC) 2011/congresso_luogo:/congresso_data:2011/anno:2011/pagina_da:183/pagina_a:186/intervallo_pagine:183–186
- Accession number :
- edsair.doi.dedup.....d83cebcf8daa5467a915fb7e2f91953d
- Full Text :
- https://doi.org/10.1109/ESSDERC.2011.6044204