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Process Variation Aware Analysis of SRAM SEU Cross Sections Using Data Retention Voltage
- Source :
- IEEE Transactions on Nuclear Science. 66(1):155-162
- Publication Year :
- 2019
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2019.
-
Abstract
- 著者人数: 13名<br />Accepted: 2018-11-13<br />資料番号: SA1180337000
- Subjects :
- Nuclear and High Energy Physics
Negative-bias temperature instability
static random access memory (SRAM) cells
Computer science
Hardware_PERFORMANCEANDRELIABILITY
integrated circuit reliability
neutron radiation effects
SRAM chips
Process variation
Data retention voltage
Nuclear Energy and Engineering
Electronic engineering
static noise margin
Static random-access memory
Sensitivity (control systems)
Electrical and Electronic Engineering
Radiation hardening
ion radiation effects
radiation hardening
error analysis
Test data
Voltage
Electronic circuit
quality management
Subjects
Details
- Language :
- English
- ISSN :
- 00189499
- Volume :
- 66
- Issue :
- 1
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Nuclear Science
- Accession number :
- edsair.doi.dedup.....d6e248baebf388390742ed805f650764