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Patterning-induced strain relief in single lithographic SiGe nanostructures studied by nanobeam x-ray diffraction
- Publication Year :
- 2012
- Publisher :
- Institute of Physics Publishing, 2012.
-
Abstract
- The continued downscaling in SiGe heterostructures is approaching the point at which lateral confinement leads to a uniaxial strain state, giving high enhancements of the charge carrier mobility. Investigation of the strain relaxation as induced by the patterning of a continuous SiGe layer is thus of scientific and technological importance. In the present work, the strain in single lithographically defined low-dimensional SiGe structures has been directly mapped via nanobeam x-ray diffraction. We found that the nanopatterning is able to induce an anisotropic strain relaxation, leading to a conversion of the strain state from biaxial to uniaxial. Its origin is fully compatible with a pure elastic deformation of the crystal lattice without involving plastic relaxation by injection of misfit dislocations.
- Subjects :
- Diffraction
Nanostructure
Materials science
business.industry
Mechanical Engineering
Bioengineering
Heterojunction
General Chemistry
Crystallographic defect
Crystallography
Mechanics of Materials
Optoelectronics
Relaxation (physics)
General Materials Science
Charge carrier
Electrical and Electronic Engineering
Deformation (engineering)
X-Ray Nanodiffraction, SiGe nanostructures, Strain mapping
Anisotropy
business
Subjects
Details
- Language :
- English
- Database :
- OpenAIRE
- Accession number :
- edsair.doi.dedup.....d66873edd39720fffc50d75c33ae2b4a