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Back-side integration of Hybrid III–V on Silicon DBR lasers
- Source :
- 2017 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), 2017 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), Apr 2017, Hsinchu, Taiwan. pp.1-2, ⟨10.1109/VLSI-TSA.2017.7942492⟩
- Publication Year :
- 2017
- Publisher :
- HAL CCSD, 2017.
-
Abstract
- International audience; In this paper we demonstrate the monolithic integration of a fully CMOS compatible hybrid DBR laser on the backside of a SOI wafer. This innovative approach allowed implementing CMOS compatible electric interconnects and optical sources on a same chip. The optical characterizations confirm the single wavelength behavior of the realized devices which present a SMSR higher than 35 dB and can be tuned over 4 nm, opening the route to a fully integrated optical transceiver on a Si platform.
- Subjects :
- Materials science
Silicon
business.industry
chemistry.chemical_element
Silicon on insulator
02 engineering and technology
Laser
Chip
01 natural sciences
law.invention
010309 optics
Hybrid III
Wavelength
020210 optoelectronics & photonics
chemistry
law
0103 physical sciences
0202 electrical engineering, electronic engineering, information engineering
Hardware_INTEGRATEDCIRCUITS
[SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic
Optoelectronics
Wafer
Transceiver
business
Subjects
Details
- Language :
- English
- Database :
- OpenAIRE
- Journal :
- 2017 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), 2017 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA), Apr 2017, Hsinchu, Taiwan. pp.1-2, ⟨10.1109/VLSI-TSA.2017.7942492⟩
- Accession number :
- edsair.doi.dedup.....d4cec74ea38e6de6f8bf5be43d335cdf
- Full Text :
- https://doi.org/10.1109/VLSI-TSA.2017.7942492⟩