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Quality-Improved GaN Epitaxial Layers Grown on Striped Patterned Sapphire Substrates Ablated by Femtosecond Laser
- Source :
- Applied Sciences, Vol 8, Iss 10, p 1842 (2018), Applied Sciences, Volume 8, Issue 10
- Publication Year :
- 2018
- Publisher :
- MDPI AG, 2018.
-
Abstract
- In this work, we propose a new approach to create striped patterned sapphire substrate (PSS) under the circumstance that grooved patterned sapphire substrate technology exhibits more potential to reduce dislocation density in GaN (gallium nitride) epilayers. The striped grooves of patterned sapphire substrate are ablated by femtosecond laser. After the process of metal-organic chemical vapor deposition (MOCVD) method, the c-plane GaN epitaxial layers grown on striped PSS have larger crystallite size, which brings much less crystal boundary. There is much less compressive stress between the GaN crystals which improves the smoothness and compactness of GaN epilayers. This result demonstrates a significant improvement in the crystallinity of the c-plane GaN epitaxial layers grown on striped PSS.
- Subjects :
- Materials science
Gallium nitride
02 engineering and technology
Chemical vapor deposition
GaN (gallium nitride)
Epitaxy
01 natural sciences
lcsh:Technology
lcsh:Chemistry
chemistry.chemical_compound
patterned sapphire substrate
0103 physical sciences
General Materials Science
Metalorganic vapour phase epitaxy
Instrumentation
lcsh:QH301-705.5
MOCVD (metal-organic chemical vapor deposition)
010302 applied physics
Fluid Flow and Transfer Processes
Laser ablation
business.industry
lcsh:T
Process Chemistry and Technology
General Engineering
021001 nanoscience & nanotechnology
lcsh:QC1-999
Computer Science Applications
chemistry
lcsh:Biology (General)
lcsh:QD1-999
lcsh:TA1-2040
Femtosecond
Sapphire
laser ablation
Optoelectronics
Crystallite
0210 nano-technology
business
lcsh:Engineering (General). Civil engineering (General)
lcsh:Physics
Subjects
Details
- Language :
- English
- ISSN :
- 20763417
- Volume :
- 8
- Issue :
- 10
- Database :
- OpenAIRE
- Journal :
- Applied Sciences
- Accession number :
- edsair.doi.dedup.....d42103fc1ffd0c3578e1ccfbe09ed246