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Impact of the capture time on the series resistance of quantum-well diode lasers
- Source :
- Semiconductor Science and Technology. 35:085032
- Publication Year :
- 2020
- Publisher :
- IOP Publishing, 2020.
-
Abstract
- Electrons and holes injected into a semiconductor heterostructure containing quantum wells are captured with a finite time. We show theoretically that this very fact can cause a considerable excess contribution to the series resistivity and this is one of the main limiting factors to higher efficiency for GaAs based high-power lasers. The theory combines a standard microscopic-based model for the capture-escape processes in the quantum well with a drift-diffusion description of current flow outside the quantum well. Simulations of five GaAs-based devices differing in their Al-content reveal the root-cause of the unexpected and until now unexplained increase of the series resistance with decreasing heat sink temperature measured recently. The finite capture time results in resistances in excess of the bulk layer resistances (decreasing with increasing temperature) from 1 mΩ up to 30 mΩ in good agreement with the experiment.
- Subjects :
- Semiconductor laser
Materials science
GaAs based high-power lasers
02 engineering and technology
Electron
Heat sink
01 natural sciences
semiconductor heterostructure
Electrical resistivity and conductivity
0103 physical sciences
Materials Chemistry
Electrical and Electronic Engineering
78A60
Quantum well
Diode
010302 applied physics
73.21.Fg
experiment
Condensed matter physics
Equivalent series resistance
73.43.Cd
business.industry
42.55.Px
Heterojunction
simulation
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
021001 nanoscience & nanotechnology
Condensed Matter Physics
42.65.Sf
five GaAs-based devices
Electronic, Optical and Magnetic Materials
Semiconductor
capture-escape
0210 nano-technology
business
Subjects
Details
- ISSN :
- 13616641 and 02681242
- Volume :
- 35
- Database :
- OpenAIRE
- Journal :
- Semiconductor Science and Technology
- Accession number :
- edsair.doi.dedup.....d40b127dfb0d6553d2e6467aaaa5540b
- Full Text :
- https://doi.org/10.1088/1361-6641/ab9723