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Impact of the capture time on the series resistance of quantum-well diode lasers

Authors :
A Boni
Hans-Jürgen Wünsche
Hans Wenzel
Paul Crump
Source :
Semiconductor Science and Technology. 35:085032
Publication Year :
2020
Publisher :
IOP Publishing, 2020.

Abstract

Electrons and holes injected into a semiconductor heterostructure containing quantum wells are captured with a finite time. We show theoretically that this very fact can cause a considerable excess contribution to the series resistivity and this is one of the main limiting factors to higher efficiency for GaAs based high-power lasers. The theory combines a standard microscopic-based model for the capture-escape processes in the quantum well with a drift-diffusion description of current flow outside the quantum well. Simulations of five GaAs-based devices differing in their Al-content reveal the root-cause of the unexpected and until now unexplained increase of the series resistance with decreasing heat sink temperature measured recently. The finite capture time results in resistances in excess of the bulk layer resistances (decreasing with increasing temperature) from 1 mΩ up to 30 mΩ in good agreement with the experiment.

Details

ISSN :
13616641 and 02681242
Volume :
35
Database :
OpenAIRE
Journal :
Semiconductor Science and Technology
Accession number :
edsair.doi.dedup.....d40b127dfb0d6553d2e6467aaaa5540b
Full Text :
https://doi.org/10.1088/1361-6641/ab9723