Reliable Parameter Extraction of Asymmetric GaN-Based Heterojunction Field Effect Transistors

MLA

C. Storey, et al. “Reliable Parameter Extraction of Asymmetric GaN-Based Heterojunction Field Effect Transistors.” 2018 13th European Microwave Integrated Circuits Conference (EuMIC), Sept. 2018. EBSCOhost, https://doi.org/10.23919/eumic.2018.8539946.

APA

C. Storey, Xuekun Du, Mohamed Helaoui, Sagar K. Dhar, Simon Wingar, Jingye Cai, Fadhel M. Ghannouchi, Chang Jiang You, & Anwar Jarndal. (2018). Reliable Parameter Extraction of Asymmetric GaN-Based Heterojunction Field Effect Transistors. 2018 13th European Microwave Integrated Circuits Conference (EuMIC). https://doi.org/10.23919/eumic.2018.8539946

Chicago

C. Storey, Xuekun Du, Mohamed Helaoui, Sagar K. Dhar, Simon Wingar, Jingye Cai, Fadhel M. Ghannouchi, Chang Jiang You, and Anwar Jarndal. 2018. “Reliable Parameter Extraction of Asymmetric GaN-Based Heterojunction Field Effect Transistors.” 2018 13th European Microwave Integrated Circuits Conference (EuMIC), September. doi:10.23919/eumic.2018.8539946.