Novel low-field magnetoresistive devices based on manganites

Authors :: Pietro Perlo
G. Pepe
Daniele Pullini
Paolo Perna
Antonio Ruotolo
A. Oropallo
Gianfranco Innocenti
U. Scotti di Uccio
F. Miletto Granozio
Source :: Journal of magnetism and magnetic materials 310 (2007): E684–E686. doi:10.1016/j.jmmm.2006.10.689, info:cnr-pdr/source/autori:Ruotolo A.; Miletto-Granozio F.; Oropallo A.; Pepe G.P.; Perna P.; di Uccio U.S.; Pullini D.; Innocenti G.; Perlo P./titolo:Novel low field magnetoresistive devices based on manganites/doi:10.1016%2Fj.jmmm.2006.10.689/rivista:Journal of magnetism and magnetic materials/anno:2007/pagina_da:E684/pagina_a:E686/intervallo_pagine:E684–E686/volume:310
Publication Year :: 2007
Publisher :: Elsevier BV, 2007.
Abstract: We present novel low-field magnetoresistive devices based on the ferromagnetic manganite La0.7Sr0.3MnO3 operating in the current in plane (CIP) configuration. In these planar spin-valve devices, a focused Ga+ beam is used to create pinning centers for magnetic domain walls. The spin-dependent scattering of polarized electrons at the domain walls (DW) is responsible for the magnetoresistance observed in the patterned tracks. The magneto-transport properties of these devices are interpreted within a model for DW magnetoresistance. Applications such as magnetic data storage can be envisaged for the structures we investigated. (C) 2006 Elsevier B.V. All rights reserved.