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Fabrication of GaAs quantum dots by droplet epitaxy on Si/Ge virtual substrate
- Source :
- IOP Conference Series: Materials Science and Engineering. 6:012009
- Publication Year :
- 2009
- Publisher :
- IOP Publishing, 2009.
-
Abstract
- We present here the fabrication, via droplet epitaxy, of GaAs/AlGaAs quantum dots with high optical efficiency on Si. The growth substrate lattice parameter was adapted to that of (Al)GaAs via Ge virtual substrates (GeVS). The samples clearly show the presence of quantum dot self-assembly, with the designed shape and density. Photoluminescence measurements, performed at low temperature, show an intense emission band from the quantum dots.
- Subjects :
- quantum nanostructures, molecular beam epitaxy, III-V semiconductors
Fabrication
Photoluminescence
Materials science
Condensed matter physics
business.industry
Substrate (electronics)
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Epitaxy
Computer Science::Other
Condensed Matter::Materials Science
Lattice constant
Quantum dot
Quantum dot laser
Optoelectronics
business
Luminescence
FIS/03 - FISICA DELLA MATERIA
Subjects
Details
- ISSN :
- 1757899X
- Volume :
- 6
- Database :
- OpenAIRE
- Journal :
- IOP Conference Series: Materials Science and Engineering
- Accession number :
- edsair.doi.dedup.....d2beb8ec5c2e52d5488ede6a48c140a9