Approaching Defect-free Amorphous Silicon Nitride by Plasma-assisted Atomic Beam Deposition for High Performance Gate Dielectric

MLA

Hung Chun Lee, et al. “Approaching Defect-Free Amorphous Silicon Nitride by Plasma-Assisted Atomic Beam Deposition for High Performance Gate Dielectric.” Scientific Reports, vol. 6, June 2016. EBSCOhost, https://doi.org/10.1038/srep28326.

APA

Hung Chun Lee, Yi-Chun Chen, Hung Ying Chen, Shu Ju Tsai, Hong Wei Shiu, Ying Hsin Lu, Hsisheng Teng, Jhih Wei Chen, Chung Lin Wu, Ting-Chang Chang, Lo-Yueh Chang, Chiang Lun Wang, Han Ting Hsueh, Li Wei Tu, Jyun Yu Tsai, Chun Yeh Lin, & Chia Hao Chen. (2016). Approaching Defect-free Amorphous Silicon Nitride by Plasma-assisted Atomic Beam Deposition for High Performance Gate Dielectric. Scientific Reports, 6. https://doi.org/10.1038/srep28326

Chicago

Hung Chun Lee, Yi-Chun Chen, Hung Ying Chen, Shu Ju Tsai, Hong Wei Shiu, Ying Hsin Lu, Hsisheng Teng, et al. 2016. “Approaching Defect-Free Amorphous Silicon Nitride by Plasma-Assisted Atomic Beam Deposition for High Performance Gate Dielectric.” Scientific Reports 6 (June). doi:10.1038/srep28326.