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Defects and polytypism in SiC : the role of diffuse X-ray scattering

Authors :
A. Boulle
D. Dompoint
I. Galben-Sandulache
D. Chaussende
Gabriel Ferro
Paul Siffert
Axe 3 : organisation structurale multiéchelle des matériaux
Science des Procédés Céramiques et de Traitements de Surface (SPCTS)
Université de Limoges (UNILIM)-Ecole Nationale Supérieure de Céramique Industrielle (ENSCI)-Institut des Procédés Appliqués aux Matériaux (IPAM)
Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Ecole Nationale Supérieure de Céramique Industrielle (ENSCI)-Institut des Procédés Appliqués aux Matériaux (IPAM)
Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)
Laboratoire des matériaux et du génie physique (LMGP )
Institut National Polytechnique de Grenoble (INPG)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)
G. FERRO, P. SIFFERT
IRCER - Axe 3 : organisation structurale multiéchelle des matériaux (IRCER-AXE3)
Institut de Recherche sur les CERamiques (IRCER)
Institut de Chimie du CNRS (INC)-Institut des Procédés Appliqués aux Matériaux (IPAM)
Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Institut des Procédés Appliqués aux Matériaux (IPAM)
Université de Limoges (UNILIM)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)
Source :
2010 WIDE BANDGAP CUBIC SEMICONDUCTORS: FROM GROWTH TO DEVICES, E-MRS Symposium F, E-MRS Symposium F, Jun 2010, Strasbourg, France. pp.43-46, ⟨10.1063/1.3518307⟩, AIP Conference Proceedings, 2010 WIDE BANDGAP CUBIC SEMICONDUCTORS: FROM GROWTH TO DEVICES:, Oct 2010, Strasbourg, France. pp.43-46, ⟨10.1063/1.3518307⟩
Publication Year :
2010
Publisher :
HAL CCSD, 2010.

Abstract

International audience; Stacking faults (SFs) and the 3C-6H polytypic transition in thick (001)-oriented 3C-SiC crystals are studied by means of diffuse X-ray scattering. The presence of SFs lying in the {111} planes gives rise to streaked reciprocal lattice points with the streaks being parallel to the directions. In the case of low SF densities the defects are uncorrelated and the simulation of the diffuse intensity distribution allows to derive the SF density. In partially transformed crystals, the SFs are spatially correlated which gives rise to an intense and asymmetric diffuse scattering distribution. Its simulation allows to determine both the transformation mechanism and the transformation level.

Subjects

Subjects :
Diffraction
SiC
Materials science
PACS: 61.72.Dd, 61.72.Nn
Scattering
business.industry
X-ray
Stacking
020206 networking & telecommunications
02 engineering and technology
Crystal structure
[CHIM.MATE]Chemical Sciences/Material chemistry
Molecular physics
Crystallographic defect
Reciprocal lattice
Optics
X-ray crystallography
0202 electrical engineering, electronic engineering, information engineering
020201 artificial intelligence & image processing
Defects
business
Diffuse X-ray scattering

Details

Language :
English
Database :
OpenAIRE
Journal :
2010 WIDE BANDGAP CUBIC SEMICONDUCTORS: FROM GROWTH TO DEVICES, E-MRS Symposium F, E-MRS Symposium F, Jun 2010, Strasbourg, France. pp.43-46, ⟨10.1063/1.3518307⟩, AIP Conference Proceedings, 2010 WIDE BANDGAP CUBIC SEMICONDUCTORS: FROM GROWTH TO DEVICES:, Oct 2010, Strasbourg, France. pp.43-46, ⟨10.1063/1.3518307⟩
Accession number :
edsair.doi.dedup.....d1f0c81a898bd4b84a9e658b9db5fd0b

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