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Defects and polytypism in SiC : the role of diffuse X-ray scattering
- Source :
- 2010 WIDE BANDGAP CUBIC SEMICONDUCTORS: FROM GROWTH TO DEVICES, E-MRS Symposium F, E-MRS Symposium F, Jun 2010, Strasbourg, France. pp.43-46, ⟨10.1063/1.3518307⟩, AIP Conference Proceedings, 2010 WIDE BANDGAP CUBIC SEMICONDUCTORS: FROM GROWTH TO DEVICES:, Oct 2010, Strasbourg, France. pp.43-46, ⟨10.1063/1.3518307⟩
- Publication Year :
- 2010
- Publisher :
- HAL CCSD, 2010.
-
Abstract
- International audience; Stacking faults (SFs) and the 3C-6H polytypic transition in thick (001)-oriented 3C-SiC crystals are studied by means of diffuse X-ray scattering. The presence of SFs lying in the {111} planes gives rise to streaked reciprocal lattice points with the streaks being parallel to the directions. In the case of low SF densities the defects are uncorrelated and the simulation of the diffuse intensity distribution allows to derive the SF density. In partially transformed crystals, the SFs are spatially correlated which gives rise to an intense and asymmetric diffuse scattering distribution. Its simulation allows to determine both the transformation mechanism and the transformation level.
- Subjects :
- Diffraction
SiC
Materials science
PACS: 61.72.Dd, 61.72.Nn
Scattering
business.industry
X-ray
Stacking
020206 networking & telecommunications
02 engineering and technology
Crystal structure
[CHIM.MATE]Chemical Sciences/Material chemistry
Molecular physics
Crystallographic defect
Reciprocal lattice
Optics
X-ray crystallography
0202 electrical engineering, electronic engineering, information engineering
020201 artificial intelligence & image processing
Defects
business
Diffuse X-ray scattering
Subjects
Details
- Language :
- English
- Database :
- OpenAIRE
- Journal :
- 2010 WIDE BANDGAP CUBIC SEMICONDUCTORS: FROM GROWTH TO DEVICES, E-MRS Symposium F, E-MRS Symposium F, Jun 2010, Strasbourg, France. pp.43-46, ⟨10.1063/1.3518307⟩, AIP Conference Proceedings, 2010 WIDE BANDGAP CUBIC SEMICONDUCTORS: FROM GROWTH TO DEVICES:, Oct 2010, Strasbourg, France. pp.43-46, ⟨10.1063/1.3518307⟩
- Accession number :
- edsair.doi.dedup.....d1f0c81a898bd4b84a9e658b9db5fd0b