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Amorphous silicon-based microchannel plates
- Source :
- NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND, Nuclear Instruments and Methods in Physics ResearchA
- Publication Year :
- 2012
- Publisher :
- Elsevier BV, 2012.
-
Abstract
- Microchannel plates (MCP) based on hydrogenated amorphous silicon (a-Si:H) were recently introduced to overcome some of the limitations of crystalline silicon and glass MCP. The typical thickness of a-Si:H based MCPs (AMCP) ranges between 80 and 100 μm and the micromachining of the channels is realized by deep reactive ion etching (DRIE). Advantages and issues regarding the fabrication process are presented and discussed. Electron amplification is demonstrated and analyzed using Electron Beam Induced Current (EBIC) technique. The gain increases as a function of the bias voltage, limited to -340 V on account of high leakage currents across the structure. EBIC maps on 10° tilted samples confirm that the device active area extend to the entire channel opening. AMCP characterization with the electron beam shows gain saturation and signal quenching which depends on the effectiveness of the charge replenishment in the channel walls. © 2011 Elsevier B.V. All rights reserved.
- Subjects :
- Amorphous silicon
Nuclear and High Energy Physics
microchannel plates
deposition (PE-CVD)
amorphous silicon
01 natural sciences
030218 nuclear medicine & medical imaging
03 medical and health sciences
chemistry.chemical_compound
0302 clinical medicine
plasma enhanced chemical vapor
0103 physical sciences
Deep reactive-ion etching
Crystalline silicon
Instrumentation
Leakage (electronics)
010302 applied physics
Physics
Microchannel
business.industry
Electron beam-induced current
Biasing
Surface micromachining
chemistry
Optoelectronics
business
Subjects
Details
- ISSN :
- 01689002
- Volume :
- 695
- Database :
- OpenAIRE
- Journal :
- Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
- Accession number :
- edsair.doi.dedup.....d1e63a490590a87d399d26c76b8ed7ff
- Full Text :
- https://doi.org/10.1016/j.nima.2011.11.089