Approximate optical gain formulas for 1.55-μm strained quaternary quantum-well lasers

We have used an efficient analytical model to calculate the optical gain of the strained quantum-well laser of InGaAsP-InP material system. Based on the anisotropic effective mass theory, empirical formulas delineating the relations between optical gain, emission wavelength, well width and material compositions are obtained for 1.55-/spl mu/m In/sub 1-x/Ga/sub x/As/sub y/P/sub 1-y/ quaternary strained quantum-well lasers. Results show a logarithmic relation between the peak optical gain and carrier concentration for all possible material compositions of the quaternary system. We show that the logarithmic relation can be derived algebraically. >