Influence of the V/III ratio in the gas phase on thin epitaxial AlN layers grown on (0001) sapphire by high temperature hydride vapor phase epitaxy

MLA

Michel Pons, et al. Influence of the V/III Ratio in the Gas Phase on Thin Epitaxial AlN Layers Grown on (0001) Sapphire by High Temperature Hydride Vapor Phase Epitaxy. Dec. 2014. EBSCOhost, https://doi.org/10.1016/j.tsf.2014.11.022⟩.

APA

Michel Pons, Isabelle Gelard, Stéphane Coindeau, V. Fellmann, M. Balaji, Brigitte Attal-Trétout, A. Claudel, Krishnan Baskar, Raphaël Boichot, Elisabeth Blanquet, N. Coudurier, Alexandre Crisci, D. Sauvage, S. Luca, Aurélie Pierret, & Guillaume Beutier. (2014). Influence of the V/III ratio in the gas phase on thin epitaxial AlN layers grown on (0001) sapphire by high temperature hydride vapor phase epitaxy. https://doi.org/10.1016/j.tsf.2014.11.022⟩

Chicago

Michel Pons, Isabelle Gelard, Stéphane Coindeau, V. Fellmann, M. Balaji, Brigitte Attal-Trétout, A. Claudel, et al. 2014. “Influence of the V/III Ratio in the Gas Phase on Thin Epitaxial AlN Layers Grown on (0001) Sapphire by High Temperature Hydride Vapor Phase Epitaxy,” December. doi:10.1016/j.tsf.2014.11.022⟩.