RF and noise properties of SOI mosfets, including the influence of a direct tunneling gate current (Invited)

In this paper, we describe the small signal and noise properties of SOI MOSFETs. A first order discussion is carried out to discuss the parameters that strongly influence the cut-off frequencies (f/sub t/, f/sub max/) and the related noise performance in up-to-date SOI MOSFETs. Then a high frequency noise modeling is used to discuss the bias dependence of the gate and drain noise current and related key noise parameters as well as their upcoming variations along the gate length down-scaling. The capability of the noise modeling is then highlighted through comparisons with experimental data, and the influence of the parasitic capacitances (overlap, fringing) is discussed. Finally, special emphasis is made towards the influence of a direct tunneling current on the noise performance of SOI MOSFETs.