Fabrication of Oxide Passivated and Antireflective Thin Film Coated Emitter Layer in Two Steps for the Application in Photovoltaic

The gap between laboratory scale and commercial silicon solar cells is wider, as many processes are not being practiced in commercialization. In this work, we have investigated the silicon solar cell fabrication process followed by industries and proposed a simplified process. The fabrication process for the emitter layer, 100 nm thin film anti-reflection coating and wet oxide passivation in a single chamber diffusion furnace on 200 micron p-type mono crystalline silicon wafer was followed. The diffusion process was carried out in an atmospheric furnace using phosphorus oxychloride as dopant source, oxygen for anti-reflection coating and wet oxide surface passivation. Topographical, optical and electrical characterization were conducted to understand the properties of the above layers for application in solar cell fabrication. The reflectivity and average sheet resistivity data of the diffused wafer is in the range those published in literature. Following the procedure, number of process steps, instrument and cost of commercial solar cell fabrication can be optimized.