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Effect of Si+ ion irradiation of α-Ga2O3 epitaxial layers on their hydrogen sensitivity

Authors :
Yakovlev, Nikita
Almaev, Aleksei
Butenko, Pavel
Mikhaylov, Alexey
Pechnikov, Aleksey
Stepanov, S.I.
Timashov, Roman
Chikiryaka, Andrew
Nikolaev, Vladimir
Source :
Materials physics and mechanics. 2022. Vol. 48, № 3. P. 301-307
Publication Year :
2022
Publisher :
Peter the Great St. Petersburg Polytechnic University, 2022.

Abstract

The effect of Si+ ion irradiation of α-Ga2O3 at doses of 8·1012 cm-2, 8·1014 cm-2, and energy of 100 keV on the gas-sensitive properties has been studied. It is shown that irradiation of α-Ga2O3 layer grown by halide vapor phase epitaxy with implanted Si+ ions allows effective control of its sensitivity to H2, response, and recovery times, as well as varying the operating temperatures. The maximum sensitivity to H2 occurred for samples with Si+ ion irradiation dose of 8·1012 cm-2 at 400ºC. The mechanism of sensitivity of α-Ga2O3 epitaxial layers irradiated with Si+ to H2 is discussed.

Details

Database :
OpenAIRE
Journal :
Materials physics and mechanics. 2022. Vol. 48, № 3. P. 301-307
Accession number :
edsair.doi.dedup.....cd4ad0c9d26a28744323133bca523441
Full Text :
https://doi.org/10.18149/mpm.4832022_1