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Grain Boundaries in Chemical Vapor Deposited Atomically Thin Hexagonal Boron Nitride
- Publication Year :
- 2018
-
Abstract
- Large-area two-dimensional (2D) materials for technical applications can now be produced by chemical vapor deposition (CVD). Unfortunately, grain boundaries (GBs) are ubiquitously introduced as a result of the coalescence of grains with different crystallographic orientations. It is well known that the properties of materials largely depend on GB structures. Here, we carried out a systematic study on the GB structures in CVD-grown polycrystalline h-BN monolayer films by transmission electron microscope. Interestingly, most of these GBs are revealed to be formed via overlapping between neighboring grains, which are distinct from the covalently bonded GBs as commonly observed in other 2D materials. Further density functional theory (DFT) calculations show that the hydrogen plays an essential role in overlapping GB formation. This work provides an in-depth understanding of the microstructures and formation mechanisms of GBs in CVD-grown h-BN films, which should be informative in guiding the precisely controlled synthesis of large area single crystalline h-BN and other 2D materials.<br />12 pages, 14 figures
- Subjects :
- Condensed Matter - Materials Science
Materials science
Physics and Astronomy (miscellaneous)
Wide-bandgap semiconductor
Materials Science (cond-mat.mtrl-sci)
FOS: Physical sciences
Heterojunction
02 engineering and technology
Chemical vapor deposition
021001 nanoscience & nanotechnology
01 natural sciences
Transmission electron microscopy
Chemical physics
0103 physical sciences
Monolayer
Ultraviolet light
General Materials Science
Grain boundary
Crystallite
010306 general physics
0210 nano-technology
Subjects
Details
- Language :
- English
- Database :
- OpenAIRE
- Accession number :
- edsair.doi.dedup.....cbedc28f985aa7108c52e066c6cfaca9