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Thermal stress analysis of bulk single crystal during Czochralski growth (comparison between anisotropic analysis and isotropic analysis)
- Source :
- Journal of Crystal Growth. 113:227-241
- Publication Year :
- 1991
- Publisher :
- Elsevier BV, 1991.
-
Abstract
- A three-dimensional finite element program is developed for calculating the thermal stress in bulk single crystals during Czochralski growth. Elastic anisotropy is taken into account in this program. Thermal stress analyses of a GaAs bulk single crystal are performed in the cases of the [001] and [111] pulling directions, using its temperature distribution obtained from a heat conduction analysis and its material properties. The stress component and the dislocation density parameter are compared between the anisotropic analysis, taking account of elastic anisotropy, and the isotropic analysis, using Young's modulus and the Poisson ratio in the {111} plane. Significant differences are found in their values and distribution patterns between both analyses.
- Subjects :
- Materials science
Condensed matter physics
Mechanical Engineering
Isotropy
Crystal growth
Condensed Matter Physics
Thermal conduction
Finite element method
Poisson's ratio
Inorganic Chemistry
Stress (mechanics)
Crystallography
symbols.namesake
Mechanics of Materials
Materials Chemistry
symbols
General Materials Science
Dislocation
Material properties
Anisotropy
Single crystal
Subjects
Details
- ISSN :
- 00220248
- Volume :
- 113
- Database :
- OpenAIRE
- Journal :
- Journal of Crystal Growth
- Accession number :
- edsair.doi.dedup.....cabe91a0e0f34c7f18d42617ad41abe9