More than one order enhancement in peak detectivity (D*) for quantum dot infrared photodetectors implanted with low energy light ions (H−)

In(Ga)As/GaAs-based quantum dot infrared photodetectors (QDIPs) have emerged as one of the most suitable devices for infrared detection. However, quantum dot devices suffer from lower efficiencies due to a low fill-factor (similar to 20%-25%) of dots. Here, we report a post-growth technique for improving the QDIP performance using low energy light ion (H-) implantation. At high bias, there is evidence of suppression in the field-assisted tunneling component of the dark current. Enhancement in peak detectivity (D*), a measure of the signal-to-noise ratio, by more than one order, from similar to 10(9) to 2.44 x 10(10) cm Hz(1/2)/W was obtained from the implanted devices. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4791675]