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Suppressed carrier density for the patterned high mobility two-dimensional electron gas at γ-Al2O3/SrTiO3 heterointerfaces
- Source :
- Niu, W, Gan, Y, Christensen, D V, von Soosten, M, Wang, X, Xu, Y, Zhang, R, Pryds, N & Chen, Y 2017, ' Suppressed carrier density for the patterned high mobility two-dimensional electron gas at γ-Al 2 O 3 /SrTiO 3 heterointerfaces ', Applied Physics Letters, vol. 111, no. 2, 021602 . https://doi.org/10.1063/1.4993165
- Publication Year :
- 2017
- Publisher :
- AIP Publishing, 2017.
-
Abstract
- The two-dimensional electron gas (2DEG) at the non-isostructural interface between spinel gamma-Al2O3 and perovskite SrTiO3 is featured by a record electron mobility among complex oxide interfaces in addition to a high carrier density up to the order of 1E15 cm-2. Herein, we report on the patterning of 2DEG at the gamma-Al2O3/SrTiO3 interface grown at 650 {\deg}C by pulsed laser deposition using a hard mask of LaMnO3. The patterned 2DEG exhibits a critical thickness of 2 unit cells of gamma-Al2O3 for the occurrence of interface conductivity, similar to the unpatterned sample. However, its maximum carrier density is found to be approximately 3E13 cm-2, much lower than that of the unpatterned sample (1E15 cm-2). Remarkably, a high electron mobility of approximately 3,600 cm2V-1s-1 was obtained at low temperatures for the patterned 2DEG at a carrier density of 7E12 cm-2, which exhibits clear Shubnikov-de Hass quantum oscillations. The patterned high-mobility 2DEG at the gamma-Al2O3/SrTiO3 interface paves the way for the design and application of spinel/perovskite interfaces for high-mobility all-oxide electronic devices.<br />Comment: 4 figures
- Subjects :
- Condensed Matter - Materials Science
Electron mobility
Materials science
Physics and Astronomy (miscellaneous)
business.industry
Spinel
Materials Science (cond-mat.mtrl-sci)
FOS: Physical sciences
Quantum oscillations
02 engineering and technology
Conductivity
engineering.material
021001 nanoscience & nanotechnology
01 natural sciences
Pulsed laser deposition
Charge-carrier density
0103 physical sciences
engineering
Optoelectronics
010306 general physics
0210 nano-technology
business
Fermi gas
Perovskite (structure)
Subjects
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 111
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi.dedup.....c96bda0b0ef4b219576803309281ac08