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Light-trapping enhanced thin-film III-V quantum dot solar cells fabricated by epitaxial lift-off
- Source :
- arXiv.org e-Print Archive, Solar Energy Materials and Solar Cells, 181, 83-92, Publications Open Repository TOrino, NARCIS, OpenAIRE, Solar Energy Materials and Solar Cells, Solar Energy Materials and Solar Cells, 181, pp. 83-92
- Publication Year :
- 2018
- Publisher :
- Elsevier B.V., 2018.
-
Abstract
- We report thin-film InAs/GaAs quantum dot (QD) solar cells with n − i − p + deep junction structure and planar back reflector fabricated by epitaxial lift-off (ELO) of full 3-in wafers. External quantum efficiency measurements demonstrate twofold enhancement of the QD photocurrent in the ELO QD cell compared to the wafer-based QD cell. In the GaAs wavelength range, the ELO QD cell perfectly preserves the current collection efficiency of the baseline single-junction ELO cell. We demonstrate by full-wave optical simulations that integrating a micro-patterned diffraction grating in the ELO cell rearside provides more than tenfold enhancement of the near-infrared light harvesting by QDs. Experimental results are thoroughly discussed with the help of physics-based simulations to single out the impact of QD dynamics and defects on the cell photovoltaic behavior. It is demonstrated that non radiative recombination in the QD stack is the bottleneck for the open circuit voltage ( V oc ) of the reported devices. More important, our theoretical calculations demonstrate that the V oc offset of 0.3 V from the QD ground state identified by Tanabe et al., 2012, from a collection of experimental data of high quality III-V QD solar cells is a reliable – albeit conservative – metric to gauge the attainable V oc and to quantify the scope for improvement by reducing non radiative recombination. Provided that material quality issues are solved, we demonstrate – by transport and rigorous electromagnetic simulations – that light-trapping enhanced thin-film cells with twenty InAs/GaAs QD layers reach efficiency higher than 28% under unconcentrated light, ambient temperature. If photon recycling can be fully exploited, 30% efficiency is deemed to be feasible.
- Subjects :
- Thin-film
Applied Materials Science
Materials science
FOS: Physical sciences
02 engineering and technology
Applied Physics (physics.app-ph)
7. Clean energy
01 natural sciences
law.invention
Coatings and Films
Light-trapping
law
0103 physical sciences
Solar cell
Electronic
Wafer
Optical and Magnetic Materials
Renewable Energy
Thin film
Non-radiative recombination
010302 applied physics
Photocurrent
Epitaxial lift-off
Quantum dot
Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Sustainability and the Environment
Open-circuit voltage
business.industry
Physics - Applied Physics
021001 nanoscience & nanotechnology
Surfaces
Optoelectronics
Quantum efficiency
0210 nano-technology
business
Subjects
Details
- Language :
- English
- ISSN :
- 09270248
- Database :
- OpenAIRE
- Journal :
- arXiv.org e-Print Archive, Solar Energy Materials and Solar Cells, 181, 83-92, Publications Open Repository TOrino, NARCIS, OpenAIRE, Solar Energy Materials and Solar Cells, Solar Energy Materials and Solar Cells, 181, pp. 83-92
- Accession number :
- edsair.doi.dedup.....c88bb70d0f33d928e4c4d8f314293fad