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Selective formation of large-grained, (100)- or (111)-oriented Si on glass by Al-induced layer exchange

Authors :
N. Saitoh
Takashi Suemasu
Ryohei Numata
Noriko Yoshizawa
Noritaka Usami
K. Toko
Source :
Journal of Applied Physics. 115:094301
Publication Year :
2014
Publisher :
AIP Publishing, 2014.

Abstract

By controlling the Si thickness and the annealing temperature used for Al-induced crystallization, we controlled the fraction of (100) and (111) orientations of polycrystalline Si (poly-Si) grains grown on glass. Changing the proportions of crystal orientation strongly influenced the average grain size of the poly-Si layer. By growing a 99% (111)-oriented poly-Si layer, formed with a 50-nm-thick Si layer at 375 °C, we produced a Si layer with grains nearly 40 μm in size. We discuss the growth mechanism from the perspective of competition between (100)- and (111)-oriented nuclei. This achievement holds promise for fabricating high-efficiency thin-film solar cells on inexpensive glass substrates.

Details

ISSN :
10897550 and 00218979
Volume :
115
Database :
OpenAIRE
Journal :
Journal of Applied Physics
Accession number :
edsair.doi.dedup.....c7ffb68f23c82d8aa1ec695bc632cdce
Full Text :
https://doi.org/10.1063/1.4867218