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Structural and optical properties of amorphous hydrogenated silicon carbonitride films produced by PECVD
- Source :
- Applied surface science 252 (2006): 7993–8000. doi:10.1016/j.apsusc.2005.10.017, info:cnr-pdr/source/autori:Vassallo, E; Cremona, A; Ghezzi, F; Dellera, F; Laguardia, L; Ambrosone, G; Coscia, U/titolo:Structural and optical properties of amorphous hydrogenated silicon carbonitride films produced by PECVD/doi:10.1016%2Fj.apsusc.2005.10.017/rivista:Applied surface science/anno:2006/pagina_da:7993/pagina_a:8000/intervallo_pagine:7993–8000/volume:252
- Publication Year :
- 2006
- Publisher :
- Elsevier BV, 2006.
-
Abstract
- Amorphous hydrogenated silicon carbonitride thin films (a-Si:C:N:H), deposited by plasma enhanced chemical vapour deposition (PECVD) using hexamethyldisilazane (HMDSN) as monomer and Ar as feed gas, have been investigated for their structural and optical properties as a function of the deposition RF plasma power, in the range of 100-300 W. The films have been analysed by Fourier transform infrared spectroscopy (FT-IR), X-ray photoelectron spectroscopy (XPS), UV-vis-NIR spectrophotometry and atomic force microscopy (AFM). From the analysis of the Fr-IR spectra it results that the films become more amorphous and inorganic as RF plasma power increases. The incorporation of oxygen in the deposited layers, mainly due to the atmospheric attack, has been evaluated by XPS and FT-IR spectroscopy. Reflectance/transmittance spectra, acquired in the range of 200-2500 nm, allow to descrive the film absorption edge for interband transitions. A relationship between the optical energy band gap, deduced from the absorption coefficient curve, and the deposition RF plasma power has been investigated. The reduction of the optical energy gap from 3.85 to 3.69 eV and the broadening of the optical absorption tail with RF plasma power increasing from 100 to 300 W are ascribed to the growth of structural disorder, while the increase of the refractive index, evaluated at 630 nm, is attributed to a slight densification of the film. The AFM analysis confirms the amorphous character of the films and shows how the deposited layers become rougher when RF plasma power increases. The wettability of the film has been studied and related to the chemical composition and to the morphology of the deposited layers. (c) 2005 Elsevier B.V. All rights reserved.
- Subjects :
- DISORDER
Silicon
Chemistry
Analytical chemistry
General Physics and Astronomy
chemistry.chemical_element
LOCALIZED STATES
Surfaces and Interfaces
General Chemistry
Chemical vapor deposition
Condensed Matter Physics
Surfaces, Coatings and Films
Amorphous solid
CHEMICAL-VAPOR-DEPOSITION
THIN-FILMS
Absorption edge
X-ray photoelectron spectroscopy
Plasma-enhanced chemical vapor deposition
ABSORPTION
Fourier transform infrared spectroscopy
Thin film
Subjects
Details
- ISSN :
- 01694332
- Volume :
- 252
- Database :
- OpenAIRE
- Journal :
- Applied Surface Science
- Accession number :
- edsair.doi.dedup.....c7faac149d1f7aed5dede3ae46144611
- Full Text :
- https://doi.org/10.1016/j.apsusc.2005.10.017