Current bistability in InGaAs quantum wire p-i-n heterostructures

We report a clear evidence of bistability in the current-voltage (I-V) characteristics of p - i - n heterostructures containing InGaAs V-shaped quantum wires. The observed phenomenon is explained in the framework of a single carrier transport model in which the quantum wires act like traps for the vertical current. The charge trapping phenomenon is indeed demonstrated by capacitance-voltage (C-V) and photocurrent experiments.