Phase formation in the Ni/n-InP contacts for heterogeneous III/V-silicon photonic integration

The metallurgical properties of the Ni/n-InP system meet a great interest for its use as a contact in the scope of Photonics laser application. We report the formation of a compositionally non-uniform Ni-In-P amorphous layer during the early stages of the contacts elaboration, which include HCl and Ar+ plasma cleanings prior to the metal DC sputtering. During various heat treatments, the coexistence of the Ni2P and Ni3P binary phases and the Ni2(InP) ternary phase were observed while In release was featured. For temperatures equal to or greater than 350?C we highlighted the formation of In phase. Thanks to RTP and long-time annealing processes, we pointed out the predominance of the diffusion and/or interfacial reactions on the formation of the Ni2P, Ni3P and Ni2(InP) phases and that of nucleation or melting/solidification on the formation of In agglomerates. Display Omitted Modification of the InP surface by the Ar+ pre-cleanGrowth of Ni2P, Ni3P and Ni2(InP) phases associated to Indium release during rapid annealing treatmentsFormation of the Ni2P, Ni3P and Ni2(InP) phases controlled by the diffusion and/or interfacial reactionsFormation of In clusters controlled by precipitation or melting/solidification for temperatures equal to or greater than 350?C