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Probing the edge-related properties of atomically thin MoS2 at nanoscale
- Source :
- Nature Communications, Vol 10, Iss 1, Pp 1-8 (2019)
- Publication Year :
- 2019
- Publisher :
- Nature Portfolio, 2019.
-
Abstract
- Defects can induce drastic changes of the electronic properties of two-dimensional transition metal dichalcogenides and influence their applications. It is still a great challenge to characterize small defects and correlate their structures with properties. Here, we show that tip-enhanced Raman spectroscopy (TERS) can obtain distinctly different Raman features of edge defects in atomically thin MoS2, which allows us to probe their unique electronic properties and identify defect types (e.g., armchair and zigzag edges) in ambient. We observed an edge-induced Raman peak (396 cm−1) activated by the double resonance Raman scattering (DRRS) process and revealed electron–phonon interaction in edges. We further visualize the edge-induced band bending region by using this DRRS peak and electronic transition region using the electron density-sensitive Raman peak at 406 cm−1. The power of TERS demonstrated in MoS2 can also be extended to other 2D materials, which may guide the defect engineering for desired properties. Probing inevitable defects in two- dimensional materials is challenging. Here, the authors tackle this issue by using tip-enhanced Raman spectroscopy (TERS) to obtain distinctly different Raman features of edge defects in atomically thin MoS2, and further probe their unique electronic properties as well as identify the armchair and zigzag edges.
- Subjects :
- Materials science
Science
General Physics and Astronomy
02 engineering and technology
Electron
010402 general chemistry
01 natural sciences
Resonance (particle physics)
General Biochemistry, Genetics and Molecular Biology
Molecular electronic transition
symbols.namesake
Physics::Atomic and Molecular Clusters
lcsh:Science
Nanoscopic scale
Multidisciplinary
business.industry
General Chemistry
021001 nanoscience & nanotechnology
0104 chemical sciences
Band bending
Zigzag
symbols
Optoelectronics
lcsh:Q
0210 nano-technology
business
Raman spectroscopy
Raman scattering
Subjects
Details
- Language :
- English
- ISSN :
- 20411723
- Volume :
- 10
- Issue :
- 1
- Database :
- OpenAIRE
- Journal :
- Nature Communications
- Accession number :
- edsair.doi.dedup.....c75f60353a5139a120746183a2cc1abd