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REALIZATION OF A CONDUCTIVE BRIDGING RF SWITCH INTEGRATED ONTO PRINTED CIRCUIT BOARD

Authors :
Patrice Gonon
Arnaud Vena
Etienne Perret
Thais Luana Vidal
Laboratoire de Conception et d'Intégration des Systèmes (LCIS)
Institut Polytechnique de Grenoble - Grenoble Institute of Technology-Université Pierre Mendès France - Grenoble 2 (UPMF)
Institut d’Electronique et des Systèmes (IES)
Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)
Matériaux, MicroCapteurs et Acoustique (M2A)
Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)
Laboratoire des technologies de la microélectronique (LTM)
Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Joseph Fourier - Grenoble 1 (UJF)-Centre National de la Recherche Scientifique (CNRS)
Université Pierre Mendès France - Grenoble 2 (UPMF)-Institut Polytechnique de Grenoble - Grenoble Institute of Technology
Université Joseph Fourier - Grenoble 1 (UJF)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)
Source :
Progress In Electromagnetics Research, Progress In Electromagnetics Research, EMW Publishing, 2015, 151, pp.9-16. ⟨10.2528/PIER14120403⟩, Progress In Electromagnetics Research, 2015, 151, pp.9-16. ⟨10.2528/PIER14120403⟩
Publication Year :
2015
Publisher :
The Electromagnetics Academy, 2015.

Abstract

This paper presents a new approach for the realization of RF switches based on the Conductive Bridging Random Access Memory technology (CBRAM). This promising approach allows the realization of RF switches in an extremely simple manner at low cost. For the first time, an RF switch based on a MIM structure is realized with an insulator layer obtained from a commonly used resin deposited by spin coating. The paper reports a RF switch based on CBRAM and demonstrates a device integration onto plastic circuit board (PCB). The realized switch is validated by experimental measurements for a frequency range up to 1.5 GHz with an activation voltage less than 1 V.

Details

ISSN :
15598985 and 10704698
Volume :
151
Database :
OpenAIRE
Journal :
Progress In Electromagnetics Research
Accession number :
edsair.doi.dedup.....c68072f713163c924adc192cd1539d56