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Temperature dependence of radiation damage and its annealing in silicon detectors

Authors :
Hartmut Sadrozinski
W.A. Rowe
D. Joyce
A. P.T. Palounek
Hans Ziock
J.S. Kapustinsky
J. A. J. Matthews
J. Leslie
J.G. Boissevain
S. A. Jerger
A. Seiden
D. Skinner
D. Pitzl
J.K. Fleming
C. Lietzke
Max Wilder
E. Spencer
J. Ellison
K. Holzscheiter
E. Reed
Emanuela Barberis
W.E. Sondheim
Phillip D. Ferguson
M. Frautschi
Stephen Wimpenny
Nicolo Cartiglia
Source :
INSPIRE-HEP
Publication Year :
1993
Publisher :
Institute of Electrical and Electronics Engineers (IEEE), 1993.

Abstract

Silicon detectors at future collider facilities such as the Superconducting Super Collider (SSC) will be exposed to large fluences of both neutral and charged particles, resulting in considerable bulk radiation damage. In order to reduce the increase in leakage current associated with that damage, the proposed operating temperature of the silicon detectors in the SSC Solenoidal Detector Collaboration (SDC) experiment is 0 degrees C. In order to explore any potential complications of operating detectors at 0 degrees C, two sets of detectors were irradiated. One set was kept close to 0 degrees C during the exposure and annealing period, while the other was maintained at room temperature throughout ( approximately 27 degrees C during the exposure, and approximately 23 degrees C during the annealing period). The full depletion voltage and leakage current of the detectors during the irradiation period and over the subsequent annealing period were monitored. It is concluded that detectors will have to be operated at 0 degrees C, and, once damaged, be maintained at 0 degrees C in order to keep their operating voltage at a reasonable value ( >

Details

ISSN :
15581578 and 00189499
Volume :
40
Database :
OpenAIRE
Journal :
IEEE Transactions on Nuclear Science
Accession number :
edsair.doi.dedup.....c64da88156c8d80baec583b123a6b78e