Optical transitions and dynamic processes in III-nitride epilayers and multiple quantum wells

Fundamental optical transitions in GaN and InGaN epilayers, InGaN/GaN and GaN/AlGaN multiple quantum wells (MQWs) grown both by metal-organic chemical vapor deposition and reactive molecular beam epitaxy have been studied by picosecond time-resolved photoluminescence spectroscopy. The exciton binding energies and radiative recombination lifetimes of the free excitons and bound excitons have been obtained. Effects of well thickness on the optical properties of In/sub x/Ga/sub 1-x/N/GaN and GaN/Al/sub x/Ga/sub 1-x/N MQWs have also been studied.