Back to Search
Start Over
Room-Temperature Electron Spin Amplifier Based on Ga(In)NAs Alloys
- Source :
- Advanced Materials. 25:738-742
- Publication Year :
- 2012
- Publisher :
- Wiley, 2012.
-
Abstract
- The first experimental demonstration of a spin amplifier at room temperature is presented. An efficient, defect-enabled spin amplifier based on a non-magnetic semiconductor, Ga(In)NAs, is proposed and demonstrated, with a large spin gain (up to 2700% at zero field) for conduction electrons and a high cut-off frequency up to 1 GHz.
- Subjects :
- Materials science
Gallium
Indium
Arsenicals
Condensed Matter::Materials Science
Materials Testing
Alloys
General Materials Science
Spin (physics)
Computer Science::Distributed, Parallel, and Cluster Computing
Amplifiers, Electronic
Spintronics
Condensed matter physics
business.industry
Mechanical Engineering
Amplifier
Temperature
spin amplifiers
spintronics
room temperature
defects
semiconductors
Equipment Design
Condensed Matter Physics
Equipment Failure Analysis
Semiconductor
Semiconductors
Mechanics of Materials
Optoelectronics
Spin Labels
Condensed Matter::Strongly Correlated Electrons
business
Den kondenserade materiens fysik
Subjects
Details
- ISSN :
- 09359648
- Volume :
- 25
- Database :
- OpenAIRE
- Journal :
- Advanced Materials
- Accession number :
- edsair.doi.dedup.....c473cba991ee8c4f15bb22e7689e92b9
- Full Text :
- https://doi.org/10.1002/adma.201202597