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In-Gap States and Band-Like Transport in Memristive Devices
- Source :
- Nano letters. 19(1)
- Publication Year :
- 2018
-
Abstract
- Point defects such as oxygen vacancies cause emergent phenomena such as resistive switching in transition-metal oxides, but their influence on the electron-transport properties is far from being understood. Here, we employ direct mapping of the electronic structure of a memristive device by spectromicroscopy. We find that oxygen vacancies result in in-gap states that we use as input for single-band transport simulations. Because the in-gap states are situated below the Fermi level, they do not contribute to the current directly but impact the shape of the conduction band. Accordingly, we can describe our devices with band-like transport and tunneling across the Schottky barrier at the interface.
- Subjects :
- Materials science
Condensed matter physics
Mechanical Engineering
Schottky barrier
Interface (computing)
Fermi level
Bioengineering
02 engineering and technology
General Chemistry
Electronic structure
021001 nanoscience & nanotechnology
Condensed Matter Physics
Crystallographic defect
symbols.namesake
Resistive switching
symbols
General Materials Science
Current (fluid)
0210 nano-technology
Quantum tunnelling
Subjects
Details
- ISSN :
- 15306992
- Volume :
- 19
- Issue :
- 1
- Database :
- OpenAIRE
- Journal :
- Nano letters
- Accession number :
- edsair.doi.dedup.....c3fcaafc90ce993c569c2764cf8ca5cc