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Three-Dimensional Integrated Circuit (3D IC) Key Technology: Through-Silicon Via (TSV)
- Source :
- Nanoscale Research Letters
- Publisher :
- Springer Nature
-
Abstract
- 3D integration with through-silicon via (TSV) is a promising candidate to perform system-level integration with smaller package size, higher interconnection density, and better performance. TSV fabrication is the key technology to permit communications between various strata of the 3D integration system. TSV fabrication steps, such as etching, isolation, metallization processes, and related failure modes, as well as other characterizations are discussed in this invited review paper.
- Subjects :
- Three-dimensional integrated circuit (3D IC)
Materials science
Fabrication
Through-silicon via
Nano Review
020209 energy
Three-dimensional integrated circuit
Nanotechnology
02 engineering and technology
Hardware_PERFORMANCEANDRELIABILITY
Interconnection density
021001 nanoscience & nanotechnology
Condensed Matter Physics
Materials Science(all)
Etching (microfabrication)
0202 electrical engineering, electronic engineering, information engineering
Key (cryptography)
Electronic engineering
Hardware_INTEGRATEDCIRCUITS
General Materials Science
Isolation (database systems)
0210 nano-technology
Through-silicon via (TSV)
Subjects
Details
- Language :
- English
- ISSN :
- 19317573
- Volume :
- 12
- Issue :
- 1
- Database :
- OpenAIRE
- Journal :
- Nanoscale Research Letters
- Accession number :
- edsair.doi.dedup.....c39c4aea4d8f1da2ca0289bdfd547413
- Full Text :
- https://doi.org/10.1186/s11671-017-1831-4