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Characteristics of silicon nitride deposited by very high frequency (162 MHz)-plasma enhanced atomic layer deposition using bis(diethylamino)silane
- Source :
- Nanotechnology. 32(7)
- Publication Year :
- 2020
-
Abstract
- Silicon nitrides, deposited by capacitively coupled plasma (CCP)-type plasma enhanced atomic layer deposition (PEALD), are generally applied to today’s nanoscale semiconductor devices, and are currently being investigated in terms of their potential applications in the context of flexible displays, etc. During the PEALD process, 13.56 MHz rf power is generally employed for the generation of reactive gas plasma. In this study, the effects of a higher plasma generation frequency of 162 MHz on both plasma and silicon nitride film characteristics are investigated for the purpose of silicon nitride PEALD, using bis(diethylamino)silane (BDEAS) as the silicon precursor, and N2 plasma as the reactant gas. The PEALD silicon nitride film deposited using the 162 MHz CCP exhibited improved film characteristics, such as reduced surface roughness, a lower carbon percentage, a higher N/Si ratio, a lower wet etch rate in a diluted HF solution, lower leakage current, and higher electric breakdown field, and more uniform step coverage of the silicon nitride film deposited in a high aspect ratio trench, as compared to silicon nitride PEALD using 13.56 MHz CCP. These improved PEALD silicon nitride film characteristics are believed to be related to the higher ion density, higher reactive gas dissociation, and lower ion bombardment energy to the substrate observed in N2 plasma with a 162 MHz CCP.
- Subjects :
- Materials science
Silicon
chemistry.chemical_element
Bioengineering
02 engineering and technology
Nitride
010402 general chemistry
01 natural sciences
chemistry.chemical_compound
Atomic layer deposition
General Materials Science
Capacitively coupled plasma
Electrical and Electronic Engineering
business.industry
Mechanical Engineering
General Chemistry
Semiconductor device
Plasma
021001 nanoscience & nanotechnology
Silane
0104 chemical sciences
chemistry
Silicon nitride
Mechanics of Materials
Optoelectronics
0210 nano-technology
business
Subjects
Details
- ISSN :
- 13616528
- Volume :
- 32
- Issue :
- 7
- Database :
- OpenAIRE
- Journal :
- Nanotechnology
- Accession number :
- edsair.doi.dedup.....c3880a84605d45a4f1699ab2e060ec5e