A 350-GHz Coupled Stack Oscillator with −0.8 dBm Output Power in 65-nm Bulk CMOS Process

This paper presents a push-push coupled stack oscillator that achieves a high output power level at terahertz (THz) wave frequency. The proposed stack oscillator core adopts a frequency selective negative resistance topology to improve negative transconductance at the fundamental frequency and a transformer connected between gate and drain terminals of cross pair transistors to minimize the power loss at the second harmonic frequency. Next, the phases and the oscillation frequencies between the oscillator cores are locked by employing an inductor of frequency selective negative resistance topology. The proposed topology was implemented in a 65-nm bulk CMOS technology. The highest measured output power is &minus
0.8 dBm at 353.2 GHz while dissipating 205 mW from a 2.8 V supply voltage.