Back to Search Start Over

Annealing effects on interdiffusion in layered FA-rich perovskite solar cells

Authors :
O. K. Oyewole
Jaya Cromwell
D. O. Oyewole
Lyubov V. Titova
Ridwan Ahmed
Winston O. Soboyejo
R. K. Koech
Benjamin Agyei-Tuffour
S. A. Adeniji
E. Colin Ulloa
Reisya Ichwani
J. Hinostroza Tamayo
Nancy A. Burnham
Source :
AIP Advances, Vol 11, Iss 6, Pp 065327-065327-12 (2021)
Publication Year :
2021
Publisher :
AIP Publishing LLC, 2021.

Abstract

Annealing is one of the processing methods that are used for the fabrication of defect-free, photoactive perovskite films with compact grains in highly efficient and stable perovskite solar cells (PSCs). Thus, the annealing temperature is a key parameter for the control of the interdiffusion (of constituent elements) in photoactive films. In this paper, we present the results of a systematic study of the effects of annealing on the interdiffusion of constituent elements in efficient formamidinium-based PSCs. We also explore the effects of annealing-induced interdiffusion on layer microstructures, local strains, and the optoelectronic properties of perovskite films. We observe a dramatic upward diffusion of tin (Sn) and titanium (Ti) from fluorine-doped tin oxide and titanium dioxide (TiO2) to the perovskite films. We also observe a downward diffusion of lead (Pb) and iodine (I) from the perovskite films to the mesoporous layer of the electron transporting layer (ETL), after annealing at temperatures between 100 and 150 °C. The diffused I substitutes for Ti in the ETL, which improves the optoelectronic properties of the films, for annealing temperatures between 100 and 130 °C. The annealing-induced interdiffusion that occurs at higher temperatures (between 140 and 150 °C) results in higher levels of interdiffusion, along with increased local strains that lead to the nucleation of pores and cracks. Finally, the implications of the results are discussed for the design of PSCs with improved photoconversion efficiencies and stability.

Details

Language :
English
ISSN :
21583226
Volume :
11
Issue :
6
Database :
OpenAIRE
Journal :
AIP Advances
Accession number :
edsair.doi.dedup.....c2daf218c3d1825afbc097793d8d3740