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Spectral characteristics and morphology of nanostructured Pb–S–O thin films synthesized via two different methods
- Source :
- Materials Science in Semiconductor Processing. 27:725-732
- Publication Year :
- 2014
- Publisher :
- Elsevier BV, 2014.
-
Abstract
- Using two different experimental techniques, namely, chemical vapor deposition (CVD) and physical vapor deposition (PVD), we deposited a Lead sulphide (PbS) thin films with a very small lifetime. We investigated the morphology of the obtained PbS films using various techniques i.e.AFM, SEM, EDAX, AES and HRTEM . In the case of CVD, we found that the surface consists of grains with dimensions in the plane (diameter to 300 nm and height up to 200 nm), while the same order of the grain size has been observed for PVD. On the other hand, SEM investigation reveals that the PbS particles with various morphologies of both films have uniform and the particle size distribution. Small amount of Sodium was obtained from EDXS studies, which is may originate from the substrate where the deposition process has been produced at temperature 550-600 deg. and for CVD at minimum accelerating voltage 5kV silicon are presented in the spectrum, which means that the region for X-ray generation voltage data exceeds the thickness of the films (where the thickness of films about 0.4 micron). AES confirm that the surface layer of these films (PVD) containing carbon and oxygen and it has a thickness of 0.1micron. At a depth of 1.3 microns in films these elements is again increased, which corresponds to the film thickness of 1.5 micron. Layers of PVD films are seen by HRTEM and the studies confirm that oxygen-layer located on top of the structure, while the layers of CVD films have not only the oxygen along the crystallite boundaries, but also accumulate in the depth of the boundary with the substrate. Our results of morphology indicate that changing in spectral characteristics of films deposited by (CVD and PVD) is related to the structure and crystalline size.<br />Comment: 6 pages, 6 figures
- Subjects :
- Condensed Matter - Materials Science
Materials science
Mechanical Engineering
Analytical chemistry
Materials Science (cond-mat.mtrl-sci)
FOS: Physical sciences
Nanotechnology
Substrate (electronics)
Chemical vapor deposition
Condensed Matter Physics
Grain size
Carbon film
Mechanics of Materials
Physical vapor deposition
General Materials Science
Crystallite
Thin film
High-resolution transmission electron microscopy
Subjects
Details
- ISSN :
- 13698001
- Volume :
- 27
- Database :
- OpenAIRE
- Journal :
- Materials Science in Semiconductor Processing
- Accession number :
- edsair.doi.dedup.....c1e12d7d5a24e052468d04673a62a010