Back to Search
Start Over
Local interface composition and band discontinuities in heterovalent heterostructures
- Publication Year :
- 1994
-
Abstract
- The local Zn/Se relative concentration at the interface in ZnSe-GaAs(001) heterostructures synthesized by molecular beam epitaxy was found to be controlled by the Zn/Se flux ratio employed during the early growth stage of ZnSe on GaAs. Correspondingly, the valence band discontinuity varies from 1.20 eV (Zn-rich interface) to 0.58 eV (Se-rich interface). Comparison with the results of first-principles calculations suggests that the observed trend in band offsets is related to the establishment of neutral interfaces with different atomic configurations.
- Subjects :
- semiconductors
heterojunctions
band offset
Materials science
Condensed matter physics
heterojunction
Band gap
Interface (Java)
business.industry
General Physics and Astronomy
Heterojunction
Classification of discontinuities
semiconductor
Semimetal
Settore FIS/03 - Fisica della Materia
Discontinuity (linguistics)
Vacuum deposition
Optoelectronics
business
Molecular beam epitaxy
Subjects
Details
- Language :
- English
- Database :
- OpenAIRE
- Accession number :
- edsair.doi.dedup.....c1cd4fcebc2204d61f192b5bd40160b4