Back to Search
Start Over
Improved emission spectrum from quantum dot superluminescent light emitting diodes
- Source :
- Physica Status Solidi B, 243(15), 3988-3992. Wiley-VCH Verlag, (2006)., info:cnr-pdr/source/autori:L.H. Li, M. Rossetti, A. Fiore, L. Occhi, C. Velez/titolo:Improved emission spectrum from quantum dot superluminescent light emitting diodes/doi:/rivista:/anno:2006/pagina_da:/pagina_a:/intervallo_pagine:/volume
- Publication Year :
- 2006
-
Abstract
- The size dispersion of InAs quantum dots (QD) was optimized to broaden the photoluminescence (PL) spectrum. A broad PL spectral width up to 96 nm is achieved from a single QD layer with InAs thickness smaller than 2.4 monolayers at a growth temperature of 510 °C. QD Superluminescent light emitting diodes with an ultrawide (115 nm), smooth output spectrum are obtained by incorporating this QD layer into chirped stacked structures.
- Subjects :
- Amplified spontaneous emission
Photoluminescence
Materials science
business.industry
Condensed Matter::Other
Condensed Matter Physics
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Electronic, Optical and Magnetic Materials
law.invention
Condensed Matter::Materials Science
Optics
Quantum dot
law
Dispersion (optics)
Spectral width
Monolayer
Optoelectronics
Emission spectrum
business
Light-emitting diode
Subjects
Details
- Language :
- English
- ISSN :
- 03701972
- Volume :
- 243
- Issue :
- 15
- Database :
- OpenAIRE
- Journal :
- Physica Status Solidi B
- Accession number :
- edsair.doi.dedup.....c1c8f66b760f32e413de10f354bbf6de
- Full Text :
- https://doi.org/10.1002/pssb.200671527