Electrical and structural properties of PtSi films in deep submicron lines

Electrical and structural properties of platinum monosilicide (PtSi) in deep submicron lines are reported. The sheet resistance of the silicide films was found to be rather independent of the linewidth down to dimensions as small as 0.15 µm. Plan-view and cross-sectional transmission electron microscopy was performed to study the structural properties of these films, including their gain structures and lateral growth. The insensitive nature of the electrical properties of the silicide films to the linewidths is correlated with their structural properties.