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Optical Phonon Limited High Field Transport in Layered Materials
- Publication Year :
- 2015
- Publisher :
- arXiv, 2015.
-
Abstract
- An optical phonon limited velocity model has been employed to investigate high-field transport in a selection of layered 2D materials for both, low-power logic switches with scaled supply voltages, and high-power, high-frequency transistors. Drain currents, effective electron velocities and intrinsic cut-off frequencies as a function of carrier density have been predicted thus providing a benchmark for the optical phonon limited high-field performance limits of these materials. The optical phonon limited carrier velocities of a selection of transition metal dichalcogenides and black phosphorus are found to be modest as compared to their n-channel silicon counterparts, questioning the utility of these devices in the source-injection dominated regime. h-BN, at the other end of the spectrum, is shown to be a very promising material for high-frequency high-power devices, subject to experimental realization of high carrier densities, primarily due to its large optical phonon energy. Experimentally extracted saturation velocities from few-layer MoS2 devices show reasonable qualitative and quantitative agreement with predicted values. Temperature dependence of measured vsat is discussed and found to fit a velocity saturation model with a single material dependent fit parameter.<br />Comment: 8 pages, 6 figures
- Subjects :
- 010302 applied physics
Condensed Matter - Materials Science
Materials science
Condensed matter physics
Silicon
Phonon
Transistor
chemistry.chemical_element
Materials Science (cond-mat.mtrl-sci)
FOS: Physical sciences
Biasing
02 engineering and technology
Electron
021001 nanoscience & nanotechnology
01 natural sciences
Light scattering
Electronic, Optical and Magnetic Materials
law.invention
chemistry
law
Electron optics
0103 physical sciences
Electrical and Electronic Engineering
0210 nano-technology
Saturation (magnetic)
Subjects
Details
- Database :
- OpenAIRE
- Accession number :
- edsair.doi.dedup.....c18640bdfd31c477338589820244e686
- Full Text :
- https://doi.org/10.48550/arxiv.1508.02828