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A 32.2 GHz Full Adder Designed with TLE Method in a InP DHBT Technology

Authors :
Zhang, Yi
Li, Xiaopeng
Zhang, Youtao
Guo, Yufeng
Zhang, Ying
Gao, Hao
Integrated Circuits
Source :
Journal of Semiconductor Technology and Science, 21(6), 438-448. Institute of Electronics and Information Engineers
Publication Year :
2021
Publisher :
The Institute of Electronics Engineers of Korea, 2021.

Abstract

Ultra-high-speed full adder is the bottleneck in a tens of GHz Direct digital synthesizer (DDS). In this paper, a 32.2 GHz, 1bit full adder in a 0.7 μm InP double hetero-junction bipolar transistor (DHBT) technology is presented. In such a high-speed circuit, signal integrity is a crucial issue. Therefore, a transmission line equivalent (TLE) method is proposed. With the TLE method, the design of the full adder could be simplified with good accuracy. The synchronous latch is combined with adding operation to improve the calculation speed. A single-level parallel-gated circuit is designed using majority decision algorithm to reduce power consumption. Measurement results show that the maximum clock frequency of the full adder is 32.2-GHz, and the overall power consumption is 350 mW. The full adder is successfully adopted in a 17 GHz, 8 bit DDS which can synthesize sin-wave outputs from 66.41 MHz to 8.5 GHz in 66.41 MHz steps with an average Spurious-Free Dynamic Range (SFDR) of-18.1 dBc.

Details

ISSN :
22334866 and 15981657
Volume :
21
Database :
OpenAIRE
Journal :
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
Accession number :
edsair.doi.dedup.....c110161524a2935191af18e13e264421