Rigorous modeling of high-speed semiconductor devices

We present the state-of-the-art in simulation for industrial heterostructure devices based on SiGe/Si and III-V compound semiconductors. The work includes a detailed comparison of device simulators and current transport models to be used, and addresses critical modeling issues. Results from two-dimensional hydrodynamic analyses of Heterojunction Bipolar transistors (HBTs) and High Electron Mobility Transistors (HEMTs) with Minimos-NT are presented in good agreement with measured data. The examples are chosen to demonstrate technologically important issues which can be addressed and solved by device simulation.