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Combined SEM-CL and STEM investigation of green InGaN quantum wells
- Publication Year :
- 2022
- Publisher :
- IOP Publishing, 2022.
-
Abstract
- The microstructure of green-emitting InGaN/GaN quantum well (QW) samples grown at different temperatures was studied using cross-section scanning transmission electron microscopy (STEM) and plan-view cathodoluminescence (CL). The sample with the lowest InGaN growth temperature exhibits microscale variations in the CL intensity across the sample surface. Using STEM analysis of such areas, the observed darker patches do not correspond to any observable extended defect. Instead, they are related to changes in the extent of gross-well width fluctuations in the QWs, with more brightly emitting regions exhibiting a high density of such fluctuations, whilst dimmer regions were seen to have InGaN QWs with a more uniform thickness.
- Subjects :
- Paper
Materials science
Acoustics and Ultrasonics
Semiconductors and photonics
business.industry
Atomic force microscopy
quantum well
green LEDs
Cathodoluminescence
Gallium nitride
cathodoluminescence
Condensed Matter Physics
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
chemistry.chemical_compound
chemistry
TEM
Optoelectronics
AFM
business
gallium nitride
Quantum well
Subjects
Details
- Database :
- OpenAIRE
- Accession number :
- edsair.doi.dedup.....bf7a5867361ea3e81750f37f4bc86e85
- Full Text :
- https://doi.org/10.17863/cam.80726