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Chemical Structure of Conductive Filaments in Tantalum Oxide Memristive Devices and Its Implications for the Formation Mechanism

Authors :
Thomas Heisig
Kristof Lange
Alexander Gutsche
Kalle Thorben Goß
Sebastian Hambsch
Andrea Locatelli
Tevfik Onur Menteş
Francesca Genuzio
Stephan Menzel
Regina Dittmann
Source :
Advanced electronic materials 8(8), 2100936 (2022). doi:10.1002/aelm.202100936 special issue: "Special Issue: Celebrating Rainer Waser's 65th Anniversary", ICAMD, Jeju Island, South Korea, 2021-12-06-2021-12-10, Advanced electronic materials 8(8), 2100936-(2022). doi:10.1002/aelm.202100936
Publication Year :
2022
Publisher :
Wiley-VCH Verlag GmbH & Co. KG, 2022.

Abstract

Advanced electronic materials 2100936 (2022). doi:10.1002/aelm.202100936<br />Published by Wiley-VCH Verlag GmbH & Co. KG, Weinheim

Details

Language :
English
Database :
OpenAIRE
Journal :
Advanced electronic materials 8(8), 2100936 (2022). doi:10.1002/aelm.202100936 special issue: "Special Issue: Celebrating Rainer Waser's 65th Anniversary", ICAMD, Jeju Island, South Korea, 2021-12-06-2021-12-10, Advanced electronic materials 8(8), 2100936-(2022). doi:10.1002/aelm.202100936
Accession number :
edsair.doi.dedup.....be9b89e1f8248c63dfe6b18c827928a5
Full Text :
https://doi.org/10.1002/aelm.202100936