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Chemical Structure of Conductive Filaments in Tantalum Oxide Memristive Devices and Its Implications for the Formation Mechanism
- Source :
- Advanced electronic materials 8(8), 2100936 (2022). doi:10.1002/aelm.202100936 special issue: "Special Issue: Celebrating Rainer Waser's 65th Anniversary", ICAMD, Jeju Island, South Korea, 2021-12-06-2021-12-10, Advanced electronic materials 8(8), 2100936-(2022). doi:10.1002/aelm.202100936
- Publication Year :
- 2022
- Publisher :
- Wiley-VCH Verlag GmbH & Co. KG, 2022.
-
Abstract
- Advanced electronic materials 2100936 (2022). doi:10.1002/aelm.202100936<br />Published by Wiley-VCH Verlag GmbH & Co. KG, Weinheim
- Subjects :
- ddc:621.3
Electronic, Optical and Magnetic Materials
621.3
Subjects
Details
- Language :
- English
- Database :
- OpenAIRE
- Journal :
- Advanced electronic materials 8(8), 2100936 (2022). doi:10.1002/aelm.202100936 special issue: "Special Issue: Celebrating Rainer Waser's 65th Anniversary", ICAMD, Jeju Island, South Korea, 2021-12-06-2021-12-10, Advanced electronic materials 8(8), 2100936-(2022). doi:10.1002/aelm.202100936
- Accession number :
- edsair.doi.dedup.....be9b89e1f8248c63dfe6b18c827928a5
- Full Text :
- https://doi.org/10.1002/aelm.202100936