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Hole trap, leakage current and barrier inhomogeneity in (Pt/Au)-Al0.2Ga0.8N/GaN heterostructures
- Source :
- Journal of Physics and Chemistry of Solids, Journal of Physics and Chemistry of Solids, Elsevier, 2019, 132, pp.157-161. ⟨10.1016/j.jpcs.2019.02.027⟩, Journal of Physics and Chemistry of Solids, 2019, 132, pp.157-161. ⟨10.1016/j.jpcs.2019.02.027⟩
- Publication Year :
- 2019
- Publisher :
- HAL CCSD, 2019.
-
Abstract
- International audience; In this work, we report on the electrical characteristics of Pt/Au Schottky contacts to Al0.2Ga0.8N/GaN heterostructures. Indeed, we have realized gate current-voltage I(V) and deep level transient spectroscopy (DLTS) measurements. The behavior study of series resistance RS, ideality factor n, the effective barrier height Φb and leakage current with the temperature have emphasize barrier height inhomogeneity and extended defect in the (Pt/Au)Al0.2Ga0.8N/GaN system. The abnormal behavior of all these parameters can be attributed to the presence of traps thermally activated. Using the DLTS technique, we have detected one hole trap having an activation energy of 0.28eV and a capture cross-section of 1.9 × 10-19cm2. This trap should be a threading dislocation extending from the GaN layer to the surface.
- Subjects :
- Ideality factor
Materials science
Deep-level transient spectroscopy
02 engineering and technology
Activation energy
010402 general chemistry
Inhomogeneity
01 natural sciences
Trap (computing)
[SPI]Engineering Sciences [physics]
General Materials Science
Deep traps
Equivalent series resistance
Condensed matter physics
Barrier height
Schottky diode
Heterojunction
AlGaN/GaN HEMT
General Chemistry
021001 nanoscience & nanotechnology
Condensed Matter Physics
0104 chemical sciences
Leakage current
Dislocation
0210 nano-technology
Layer (electronics)
Subjects
Details
- Language :
- English
- ISSN :
- 00223697
- Database :
- OpenAIRE
- Journal :
- Journal of Physics and Chemistry of Solids, Journal of Physics and Chemistry of Solids, Elsevier, 2019, 132, pp.157-161. ⟨10.1016/j.jpcs.2019.02.027⟩, Journal of Physics and Chemistry of Solids, 2019, 132, pp.157-161. ⟨10.1016/j.jpcs.2019.02.027⟩
- Accession number :
- edsair.doi.dedup.....be05e4f8c4d2026baec6c60d3058a6aa