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Performance Improvement of InGaN-Based LEDs via a Current-Blocking Region Prepared via Hydrogen Passivation
- Source :
- Crystals; Volume 12; Issue 12; Pages: 1733
- Publication Year :
- 2022
- Publisher :
- Multidisciplinary Digital Publishing Institute, 2022.
-
Abstract
- We report p-GaN passivation via hydrogen plasma used to create current blocking regions (CBRs) in InGaN-based green LEDs with standard dimensions of 280 × 650 μm2. The CBRs are created before mesa etching in two variants: underneath the opaque metal p-pad and both underneath the p-pad and along the device’s mesa perimeter. The peak EQE increased by 13% and 23% in the first and the second cases, respectively, in comparison to the reference LED with no CBR. With a high injection current of 50 A/cm2, the EQE value increased by 2% in the case of CBRs underneath the p-pad as well as by 14% in the case of CBRs both underneath the p-pad and along the mesa perimeter (relative to the reference sample with no CBR).
Details
- Language :
- English
- ISSN :
- 20734352
- Database :
- OpenAIRE
- Journal :
- Crystals; Volume 12; Issue 12; Pages: 1733
- Accession number :
- edsair.doi.dedup.....bdf94be837d4f084dfd50eec368a21f2
- Full Text :
- https://doi.org/10.3390/cryst12121733