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Enhanced Performances of Quantum Dot Lasers Operating at 1.3 $\mu$ m
- Source :
- IEEE journal of selected topics in quantum electronics 14 (2008): 1188–1196. doi:10.1109/JSTQE.2008.916182, info:cnr-pdr/source/autori:Salhi, A; Raino, G; Fortunato, L; Tasco, V; Visimberga, G; Martiradonna, L; Todaro, MT; De Giorgi, M; Cingolani, R; Trampert, A; De Vittorio, M; Passaseo, A/titolo:Enhanced performances of quantum dot lasers operating at 1.3 mu m/doi:10.1109%2FJSTQE.2008.916182/rivista:IEEE journal of selected topics in quantum electronics/anno:2008/pagina_da:1188/pagina_a:1196/intervallo_pagine:1188–1196/volume:14
- Publication Year :
- 2008
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2008.
-
Abstract
- Due to their delta-like density of states, quantum dots (QDs) were expected to improve laser device performances with respect to quantum wells (QWs). Nevertheless, some important drawbacks limit this technology. For instance, QD laser still suffers from a low value of the modal gain, due to the low areal density of QDs, and inhomogeneous broadening, especially when multistacked layers are used. In this paper, we demonstrate that a linear increase of the QD modal gain with the QD layers number, as typically achieved in multi-QW lasers, is possible by a careful control of the Stranski-Krastanov QDs growth and QDs stacking optimization. A low-transparency current density of 10 A/cm(2) per QD layer and a modal gain of 6 cm(-1) per QD layer Were achieved from laser structures containing up to seven QD layers. We demonstrate 10-Gb/s direct modulation (until a temperature of 50 degrees C and high T-0 (110 K) from a single-mode device containing six QD layers.
- Subjects :
- Materials science
business.industry
ENERGY RELAXATION
Laser
Atomic and Molecular Physics, and Optics
Semiconductor laser theory
law.invention
Gallium arsenide
chemistry.chemical_compound
CARRIER RELAXATION
EXCITED-STATES
chemistry
Quantum dot laser
Quantum dot
law
DENSITY
Density of states
GROWTH
Optoelectronics
Electrical and Electronic Engineering
business
Current density
Quantum well
Subjects
Details
- ISSN :
- 15584542 and 1077260X
- Volume :
- 14
- Database :
- OpenAIRE
- Journal :
- IEEE Journal of Selected Topics in Quantum Electronics
- Accession number :
- edsair.doi.dedup.....bd605772efdb008235548f6befdf87ca
- Full Text :
- https://doi.org/10.1109/jstqe.2008.916182