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Enhanced Performances of Quantum Dot Lasers Operating at 1.3 $\mu$ m

Authors :
Gabriele Rainò
V. Tasco
Achim Trampert
G. Visimberga
Luigi Martiradonna
M. De Giorgi
Abdelmajid Salhi
Roberto Cingolani
Maria Teresa Todaro
Adriana Passaseo
M. De Vittorio
Laura Fortunato
Salhi, A
Raino, G
Fortunato, Laura
Tasco, V
Visimberga, G
Martiradonna, Luigi
TODARO M., T
DE GIORGI, M
Cingolani, Roberto
Trampert, A
DE VITTORIO, Massimo
Passaseo, A.
Source :
IEEE journal of selected topics in quantum electronics 14 (2008): 1188–1196. doi:10.1109/JSTQE.2008.916182, info:cnr-pdr/source/autori:Salhi, A; Raino, G; Fortunato, L; Tasco, V; Visimberga, G; Martiradonna, L; Todaro, MT; De Giorgi, M; Cingolani, R; Trampert, A; De Vittorio, M; Passaseo, A/titolo:Enhanced performances of quantum dot lasers operating at 1.3 mu m/doi:10.1109%2FJSTQE.2008.916182/rivista:IEEE journal of selected topics in quantum electronics/anno:2008/pagina_da:1188/pagina_a:1196/intervallo_pagine:1188–1196/volume:14
Publication Year :
2008
Publisher :
Institute of Electrical and Electronics Engineers (IEEE), 2008.

Abstract

Due to their delta-like density of states, quantum dots (QDs) were expected to improve laser device performances with respect to quantum wells (QWs). Nevertheless, some important drawbacks limit this technology. For instance, QD laser still suffers from a low value of the modal gain, due to the low areal density of QDs, and inhomogeneous broadening, especially when multistacked layers are used. In this paper, we demonstrate that a linear increase of the QD modal gain with the QD layers number, as typically achieved in multi-QW lasers, is possible by a careful control of the Stranski-Krastanov QDs growth and QDs stacking optimization. A low-transparency current density of 10 A/cm(2) per QD layer and a modal gain of 6 cm(-1) per QD layer Were achieved from laser structures containing up to seven QD layers. We demonstrate 10-Gb/s direct modulation (until a temperature of 50 degrees C and high T-0 (110 K) from a single-mode device containing six QD layers.

Details

ISSN :
15584542 and 1077260X
Volume :
14
Database :
OpenAIRE
Journal :
IEEE Journal of Selected Topics in Quantum Electronics
Accession number :
edsair.doi.dedup.....bd605772efdb008235548f6befdf87ca
Full Text :
https://doi.org/10.1109/jstqe.2008.916182