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Nanoscale tunnel field-effect transistor based on a complex-oxide lateral heterostructure
- Source :
- Physical Review Applied, 11(6):064026. American Physical Society
- Publication Year :
- 2019
-
Abstract
- We demonstrate a tunnel field effect transistor based on a lateral heterostructure patterned from an $\mathrm{LaAlO_3/SrTiO_3}$ electron gas. Charge is injected by tunneling from the $\mathrm{LaAlO_3}$/$\mathrm{SrTiO_3}$ contacts and the current through a narrow channel of insulating $\mathrm{SrTiO_3}$ is controlled via an electrostatic side gate. Drain-source I/V-curves have been measured at low and elevated temperatures. The transistor shows strong electric-field and temperature-dependent behaviour with a steep sub-threshold slope %of up to as small as $10\:\mathrm{mV/decade}$ and a transconductance as high as $g_m\approx 22 \: \mathrm{\mu A/V}$. A fully consistent transport model for the drain-source tunneling reproduces the measured steep sub-threshold slope.<br />Comment: 20 pages, 6 figures, Supplementary material: 4 pages, 2 figures
- Subjects :
- Physics
Condensed Matter - Mesoscale and Nanoscale Physics
Condensed matter physics
Transconductance
Transistor
FOS: Physical sciences
General Physics and Astronomy
Heterojunction
Charge (physics)
02 engineering and technology
021001 nanoscience & nanotechnology
Tunnel field-effect transistor
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
01 natural sciences
7. Clean energy
law.invention
Condensed Matter::Materials Science
law
Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
0103 physical sciences
010306 general physics
0210 nano-technology
Fermi gas
Nanoscopic scale
Quantum tunnelling
Subjects
Details
- Language :
- English
- ISSN :
- 23317043
- Database :
- OpenAIRE
- Journal :
- Physical Review Applied, 11(6):064026. American Physical Society
- Accession number :
- edsair.doi.dedup.....bd2f36782656d88d87fc368b8159d929